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PolarHV TM HiPerFET
Power MOSFET
ISOPLUS220 TM
(Electrically Isolated Back Surface)
IXFC 16N50P
V DSS
I D25
R DS(on)
t rr
= 500 V
= 10 A
≤ 450 m ?
≤ 200 ns
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
ISOPLUS220 TM (IXFC)
E153432
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
500
500
V
V
V GS
V GSM
I D25
I DM
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
± 30
± 40
10
35
V
V
A
A
G
D
S
Isolated back surface
I AR
E AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
10
25
750
10
A
mJ
mJ
V/ns
G = Gate
S = Source
D = Drain
T J ≤ 150 ° C, R G = 10 ?
Features
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
F C
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting Force
125
-55 ... +150
150
-55 ... +150
300
260
2500
11..65/2.5..15
W
° C
° C
° C
° C
° C
V~
N/lb
l
l
l
l
l
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Weight
2
g
Applications
l
DC-DC converters
l
Battery chargers
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
500 V
l
l
l
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
V GS(th)
V DS = V GS , I D = 2.5 mA
3.0
5.5
V
Advantages
I GSS
V GS = ± 30 V, V DS = 0 V
± 100
nA
l
Easy assembly: no screws, or isolation
foils required
I DSS
R DS(on)
V DS = V DSS
V GS = 0 V T J = 125 ° C
V GS = 10 V, I D = I T, (Note 1)
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
5 μ A
50 μ A
450 m ?
l
l
l
Space savings
High power density
Low collector capacitance to ground
(low EMI)
? 2006 IXYS All rights reserved
DS99411E(03/06)
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